Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
Product: Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
- National patents: US
- Publication number: US20090026065 A1
- Application number: US 11/878,270
- Publication date: Jan.29, 2009
- Filing date: Sep. 23, 2007
- Patent number: US8372250 B2
- Date of Patent: Jan. 29, 2009
- Inventors: Jiti Nukeaw, Bangkok, Supanit Porntheeraphat, Apichart Sungthong
- Original Assigne: National Science And Technology Development Agency
- Status: Patented
ABSTRACT:
A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.